Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
WNSC2D12650TJ |
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Manufacturer
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Manufacturer Product Number
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WNSC2D12650TJ
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Description
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SILICON CARBIDE SCHOTTKY DIODE I
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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WNSC2D12650TJ Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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Diode Type
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Silicon Carbide Schottky
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Voltage - DC Reverse (Vr) (Max)
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650 V
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Current - Average Rectified (Io)
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12A
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Voltage - Forward (Vf) (Max) @ If
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1.7 V @ 12 A
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Speed
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No Recovery Time > 500mA (Io)
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Reverse Recovery Time (trr)
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0 ns
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Current - Reverse Leakage @ Vr
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60 µA @ 650 V
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Capacitance @ Vr, F
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380pF @ 1V, 1MHz
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Mounting Type
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Surface Mount
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Package / Case
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4-VSFN Exposed Pad
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Supplier Device Package
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5-DFN (8x8)
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Operating Temperature - Junction
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175°C
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In-Stock: Contact for stock
Can ship immediately
Quantity
For Use With
