C2M0080120D

Manufacturer
Manufacturer Product Number
C2M0080120D
Description
SICFET N-CH 1200V 36A TO247-3
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
C2M0080120D Models
Product Attributes
Type
Description
Product Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 5 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
In-Stock: Contact for stock
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price