Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
C3M0045065K |
|
|---|---|
|
Manufacturer
|
|
|
Manufacturer Product Number
|
C3M0045065K
|
|
Description
|
GEN 3 650V 49A SIC MOSFET
|
|
Manufacturer Standard Lead Time
|
7 Weeks
|
|
Detailed Description
|
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
|
|
Datasheet
|
Datasheet |
|
EDA/CAD Models
|
C3M0045065K Models |
Product Attributes
|
Type
|
Description
|
|
|---|---|---|
|
Product Status
|
Active
|
|
|
FET Type
|
N-Channel
|
|
|
Technology
|
SiCFET (Silicon Carbide)
|
|
|
Drain to Source Voltage (Vdss)
|
650 V
|
|
|
Current - Continuous Drain (Id) @ 25°C
|
49A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
15V
|
|
|
Rds On (Max) @ Id, Vgs
|
60mOhm @ 17.6A, 15V
|
|
|
Vgs(th) (Max) @ Id
|
3.6V @ 4.84mA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
63 nC @ 15 V
|
|
|
Vgs (Max)
|
+19V, -8V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1621 pF @ 600 V
|
|
|
FET Feature
|
-
|
|
|
Power Dissipation (Max)
|
176W (Tc)
|
|
|
Operating Temperature
|
-40°C ~ 175°C (TJ)
|
|
|
Mounting Type
|
Through Hole
|
|
|
Supplier Device Package
|
TO-247-4L
|
|
|
Package / Case
|
TO-247-4
|
In-Stock: 294
Can ship immediately
Quantity
For Use With
