Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
C6D10065Q-TR |
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Manufacturer
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Manufacturer Product Number
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C6D10065Q-TR
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Description
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10A 650V SIC SCHOTTKY QFN
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Manufacturer Standard Lead Time
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7 Weeks
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Detailed Description
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Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
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Datasheet
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Datasheet |
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EDA/CAD Models
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C6D10065Q-TR Models |
Product Attributes
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Type
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Description
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Product Status
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Active
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Diode Type
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Silicon Carbide Schottky
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Voltage - DC Reverse (Vr) (Max)
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650 V
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Current - Average Rectified (Io)
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39A (DC)
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Voltage - Forward (Vf) (Max) @ If
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1.5 V @ 10 A
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Speed
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No Recovery Time > 500mA (Io)
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Reverse Recovery Time (trr)
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-
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Current - Reverse Leakage @ Vr
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50 µA @ 650 V
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Capacitance @ Vr, F
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611pF @ 0V, 1MHz
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Mounting Type
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Surface Mount
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Package / Case
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4-PowerVQFN
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Supplier Device Package
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4-QFN (8x8)
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Operating Temperature - Junction
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-55°C ~ 175°C
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In-Stock: 60
Can ship immediately
Quantity
For Use With
