WAS175M12BM3

Manufacturer
Manufacturer Product Number
WAS175M12BM3
Description
SIC, MODULE, 175A, 1200V, 62MM,
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
WAS175M12BM3 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
2 N-Channel (Half Bridge)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
228A (Tc)
Rds On (Max) @ Id, Vgs
10.4mOhm @ 175A, 15V
Vgs(th) (Max) @ Id
3.6V @ 43mA
Gate Charge (Qg) (Max) @ Vgs
422nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
12900pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price