EPC2215

Manufacturer
EPC
Manufacturer Product Number
EPC2215
Description
GAN TRANS 200V 8MOHM BUMPED DIE
Manufacturer Standard Lead Time
7 Weeks
Detailed Description
Infrared Encoder/Decoder IC Data-Logging, Data Exchange 8-SOIC
Datasheet
Datasheet
EDA/CAD Models
EPC2215 Models
Product Attributes
Type
Description
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
17.7 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1790 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
In-Stock: 7,948
Can ship immediately
All prices are in USD
Cut Tape (CT) & Digi-Reel®
Quantity Unit Price Ext Price